J111/A, J112/A, J113/A N-Channel JFET Features.InterFET N0132S Geometry.Low Noise: 1.2 nV/√Hz Typical.High Gain: 15mS Typical.RoHS Compliant.SMT, TH, and Bare Die Package options. Applications.Choppers.Commutators.Analog Switches Description The -25V InterFET J111/A, J112/A, and J113/A JFET's are targeted for high. Order today, ships today. J111 – JFET N-Channel 35V 625mW Through Hole TO-92-3 from ON Semiconductor. Pricing and Availability on millions of electronic components from Digi-Key Electronics. Buy J111 with extended same day shipping times. View datasheets, stock and pricing, or find other JFETs. Details about 5x Transistor j111 unipolar N-FET 35v 20ma 350mw to92-show original title. Be the first to write a review. 5x Transistor j111 unipolar N-FET 35v 20ma 350mw to92. Item Information. Quantity: More than 10 available / 211 sold / See feedback.
J300 N-FET 25V 6mA 0.35W | J309 N-FET 25V 30mA Up<4V VHF
J310 N-FET 25V 60mA Up<6.5V VH | KSA708 SI-N 80V 0.7A 0.8W 50MHz
KSA733 SI-P 60V 0.15A 0.25W 50MHz | KSC2316 SI-N 120V 0.8A 0.9W 120MHz
KSC2328A SI-N 30V 2A 1W 120MHz | KSC2330 SI-N 300V 0.1A 50MHz
KSC2331 SI-N 80V 0.7A 1W 30MHz | KTA1273 SI-P 30V 2A 1W 120MHz
KTC3198 SI-N 60V 0.15A 0.4W 130MHz | KTC9012 SI-P 30V 0.5A 0.625W
KTC9013 SI-N 30V 0.5A 0.625W | KTC9014 SI-N 50V 0.15A 0.625W
KTC9015 SI-P 50V 0.15A 0.625W | KTC9018 SI-N 30V 20mA 0.2W 500MHz
KTD1351 SI-N 60V 3A 30W 3MHz | LM394CH SUPERMATCH TRANS.PR.
LM394H SUPERMATCH TRANS.PR. | LM395T BLOWOUT RESIST. TRANSISTO
M54661P 4xTRANS.ARRAY+DIODE 1.5A | MAT02FH 2xSI-N 40V 20mA 0.5W 450MHz
MGF1302 N-FET 6V 0.1A 0.3W 4GHz | MJ10001 N-DARL+D 500V 20A 175W B>
MJ10005 N-DARL+D 500/400V 20A 175 | MJ1001 N-DARL 80V 8A 90W
MJ10012 N-DARL+D 600V 10A 175W | MJ10016 N-DARL+D 500V 50A 250W 1us
MJ11015 P-DARL 120V 30A 200W | MJ11016 N-DARL 120V 30A 200W
MJ11032 N-DARL 120V 50A 300W | MJ11033 P-DARL 120V 50A 300W
MJ15003 SI-N 140V 20A 250W 3MHz | MJ15004 SI-P 140V 20A 250W 3MHz
MJ15015 SI-N 120V 15A 180W 0.8MHz | MJ15016 SI-P 120V 15A 180W 0.8MHz
MJ15022 SI-N 350/200V 16A 250W | MJ15023 SI-P 350V 16A 250W 4MHz
MJ15024 SI-N 250V 16A 250W | MJ15025 SI-P 400V 16A 250W 4MHz
MJ16018 SI-N 1500V 10A 175W | MJ2501 P-DARL 80V 10A 150W
MJ2955 SI-P 100V 15A 150W 4MHz | MJ3001 N-DARL 80V 10A 150W
MJ4032 P-DARL 100V 10A 150W | MJ4035 N-DARL 100V 16A 150W
MJ413 SI-N 400V 10A 125W > 2.5MHz | MJ4502 SI-P 100V 30A 200W
MJ802 SI-N 90V 30A 200W | MJE13004 SI-N 300V 4A 75W TO220
MJE13005 SI-N 300V 8A 75W | MJE13005 SI-N 300V 8A 75W
MJE13007 SI-N 400V 8A 80W | MJE13009 SI-N 400V 12A 100W
MJE15030 SI-N 150V 8A 50W 30MHz | MJE15031 SI-P 150V 8A 50W 30MHz
MJE18004 SI-N 450V 5A 100W 13MHz | MJE18006 SI-N 450V 6A 100W 14MHz
MJE18008 SI-N 450V 8A 125W 0.3US | MJE210 SI-P 40V 5A 15W >65MHz
MJE243 SI-N 100V 4A 15W >40MHz | MJE253 SI-P 100V 4A 15W >40MHz
MJE270 N-DARL 100V 2A 15W >16MHz | MJE271 P-DARL 100V 2A 15W B>1K5
MJE2955T SI-P 70V 10A 90W AFPOWER | MJE3055T SI-N 70V 10A 90W AFPOW.
MJE340 SI-N 300V 0.5A 20W VIDPOW | MJE350 SI-P 300V 0.5A 20W VIDPOW
MJE5850 SI-P 350/300V 8A 80W | MJE800 N-DARL+D 60V 4A 40W B>750
MJE8502 SI-N 700V 5A 80W B>750 | MJF18004 SI-N 450V 5A 35W 13MHz
MJF18008 SI-N 450V 8A 45W 0.3us | MJF18204 SI-N 600V 5A 35W 13MHz
MJW16018 SI-P 800V 10A 150W 3MHz | MJW16206 SI-N 1200V 12A 150W 3MHz
MJW16212 SI-N 650V 10A 150W | MPF102 N-FET 25V 2mA Up<8V
MPS3640 SI-P 12V 80mA 635mW 500MHz | MPSA06 SI-N 80V 0.5A 0.625W DRIV
MPSA10 SI-N 40V 0.1A 0.21W 50MHz | MPSA12 N-DARL 20V 0.5A 0.625W
MPSA14 SI-N 30V 0.5A 0.625W | MPSA18 SI-N 45V 0.2A 625mW 100MHz
MPSA42 SI-N 300V 0.5A 0.625W | MPSA44 SI-N 500V 0.3A 625mW 20MHz
MPSA56 SI-P 80V 0.5A 0.625W DRIV | MPSA70 SI-P 40V 0.1A 0.35W >125MHz
MPSA92 SI-P 300V 0.5A 0.625W | MPSH10 SI-N 25V 40mA 0.35W 650MHz
MRF237 SI-N 36V 0.6A 4W 174MHz | MRF455 SI-N 36V 15A 60W 30MHz
MRF475 SI-N 20V 4A 4W 50MHz | ON4359 N-DARL+D 120V 4A 40W >10MHz
P6N60 N-FET 600V 6A 125W 1E8 | PH2222A SI-N 75V 0.8A 0.5W PLASTI
PH2369 SI-N 15V 0.5A 0.5W 12/18ns | PN2222A SI-N 75V 0.8A 0.5W PLASTI
PN2907 SI-P 40V 0.6A 0.4W PLASTI | PN2907A SI-P 60V 0.6A 0.4W PLASTI
PN3563 SI-N 30V 50mA 0.2W 600MHz | PN3638 SI-P 25V 0.5A 0.625W 100MHz
R1004 SI-N 50V 0.1A 47K/47K | RFP40N10 N-FET 100V 40A 160W 0.04E
S175 RF PWR AMP TRANSIST0R | S1854 DRIVER STAGE 112.5/117.5V
S2000AF SI-N 1500V 8A 50W 0.7us | S2000N SI-N 1500V 8A 50W 0.7us
S2055N SI-N+D 1500V 8A 50W 0.3us | S2530A SI-N 1000V 10A 100W
SGSF313 SI-N 450V 7A 70W 0.3us | SGSF313XI SI-N 1000V 5A 25W 0.3us
SGSF344 SI-N 600V 7A 85W | SGSF445 SI-N 600V 7A 95W
SGSF464 SI-N 600V 10A 140W | SGSIF344 SI-N 600V 7A 35W
SGSIF444 SI-N 600V 7A 55W | SLA4061 N-DARL 120V 5A 25W POWER
SLA4390 DARLINGTON ARRAY | SS8050 SI-N 40V 1.5A 1W 100MHz
SS8550 SI-P 40V 1.5A 1W 100MHz | SSM2210P 2xSI-N 40V 20mA 0.5W 200MHz
SSM2220P 2xSI-P 36V 20mA 0.5W 190MHz | STA301A N-ARRAY 3x60V 4A B>1K
STA341M P/N-ARRAY 30V 1A B>100 | STA401A N-ARRAY 4x60V 4A B>1K
STA402A P-ARRAY 4x50V 4A B>1K | STA403A N-ARRAY 4x100V 4A B>1K
STA434A P/N-ARRAY 2*60V 4A 20W B> | STA441C N-ARRAY 4x160V 1.5A B>40
STA451C P/N-ARRAY 2x60V 3A B>40 | STA471A N-ARRAY 4x60V 2A B>2K
STA8012 TRANSISTOR ARRAY | STA901M TRANSISTOR ARRAY
STP3NA60 N-FET 600V 2.9A 80W <4E | STP3NA60F N-FET 600V 2.1A 40W <4E
STP4NA60 N-FET 600V 4.3A 100W <2E2 | STP4NA60F N-FET 600V 2.7A 40W <2E2
STP4NA80 N-FET 800V 4A 110W <3E | STP4NA80F N-FET 800V 2.5A 45W <3E
STW15NA50 N-FET 500V 14.6A 190W 0.0 | SUP70N06-14 N-FET 60V 70A 142W 0.014E
THD200FI SI-N 1500V 10A 60W | TIP102 N-DARL 100V 8A 80W
TIP107 P-DARL 100V 15A 80W | TIP112 N-DARL 100V 2A 50W
TIP117 P-DARL 100V 2A 50W | TIP122 N-DARL 100V 5A 65W
TIP127 P-DARL 100V 5A 65W | TIP132 N-DARL 100V 8A 70W
TIP137 P-DARL 100V 8A 70W | TIP142 N-DARL 100V 10A 125W
TIP142T N-DARL 100V 10A 80W | TIP147 P-DARL+D 100V 10A 125W
TIP152 N-DARL+D 400/400V 7A 80W | TIP162 N-DARL 380V 10A 3W
TIP2955 SI-P 100V 15A 90W NF/S-L | TIP29E SI-N 180V 2A 30W >3MHz
TIP3055 SI-N 100V 15A 90W NF/S-L | TIP33C SI-N 115V 10A 80W
TIP34C SI-P 100V 10A 80W 3MHz | TIP35C SI-N 100V 25A 125W 3MHz
TIP36C SI-P 100V 25A 125W 3MHz | TIP41C SI-N 100V 6A 65W 3MHz
TIP42C SI-P 140V 6A 65W | TIP50 SI-N 400V 1A 40W 2us
TIP54 SI-N 500V 3A 100W >2.5MHz | TIPL760 SI-N 850/400V 4A 75W
TIPL760A SI-N 100V 4A 80W 12MHz | TIPL761A SI-N 1000V 4A 100W
TIPL762A SI-N 800V 6A 120W POWER | TIPL763A SI-N 1000V 8A 120W 8MHz
TIPL790A SI-N 150V 10A 70W 10MHz | TIPL791A SI-N 450V 4A 75W
U440 2xN-FET 25V 30mA 0.35W | UPA63H 2xN-FET 60V Idss>20mA 0.5
UPA81C N-ARRAY 8x40V 0.4A B>1K | VN10KM N-FET 60V 0.31A 5E Up<2.5
VN66AFD N-FET 60V 2A 12W 3E Up<2. | VN88AFD N-FET 80V 1.3A 20W Up<2.5
ZTX213 SI-P 45V 0.2A 0.3W 350MHz | ZTX342 SI-N 120V 0.1A 0.3W
ZTX450 SI-N 60V 1A 1W 150MHz | ZTX550 SI-P 60V 1A 1W >150MHz
ZTX653 SI-N 120V 2A 1W >140MHz | ZTX753 SI-P 120V 2A 1W TO92
ZTX753M1TA SI-P 120V 2A 1W
Type Designator: J111 Wine wine pasta sauce.
Type of Transistor: JFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.4 W
Maximum Drain-Source Voltage |Vds|: 35 V
Maximum Drain Current |Id|: 0.05 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 3 pF
Maximum Drain-Source On-State Resistance (Rds): 30 Ohm
Package: TO92
J111 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
J111 Datasheet (PDF)
0.1. j111 j112 j113 cnv.pdf Size:31K _philips
DISCRETE SEMICONDUCTORSDATA SHEETJ111; J112; J113N-channel silicon field-effecttransistorsJuly 1993Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors J111; J112; J113DESCRIPTIONSymmetrical silicon n-channeljunction FETs in plastic TO-92envelopes. They are intended forapp
0.2. pmbfj111 pmbfj112 pmbfj113.pdf Size:47K _philips
PMBFJ111; PMBFJ112;PMBFJ113N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (
J111f Twrp
0.3. pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf Size:32K _philips
DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ111;PMBFJ112; PMBFJ113N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ111;N-channel junction FETsPMBFJ112; PMBFJ113FEATURES High-speed switching Interchangeability of drain andsource connections3handbook, halfpage Low
0.4. ssm3j111tu.pdf Size:255K _toshiba
SSM3J111TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J111TU High Speed Switching Applications Unit: mm 2.5V drive 2.10.1 Low on-resistance: Ron = 480m (max) (@VGS = -4 V) 1.70.1Ron = 680m (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) 132Characteristic Symbol Rating UnitDrain-Source voltage VDS -20 VGate-Source vol
0.5. mmbfj111 mmbfj112 mmbfj113.pdf Size:151K _fairchild_semi
August 2012J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113N-Channel SwitchFeatures This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Source & Drain are interchangeable.MMBFJ111J111 MMBFJ112J112 MMBFJ112_SB51338J113 MMBFJ113GSSOT-23G TO-92 Mark
0.6. j111 j112 j113 mmbfj111 mmbfj112 mmbfj113.pdf Size:488K _fairchild_semi
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 3 pF
Maximum Drain-Source On-State Resistance (Rds): 30 Ohm
Package: TO92
J111 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
J111 Datasheet (PDF)
0.1. j111 j112 j113 cnv.pdf Size:31K _philips
DISCRETE SEMICONDUCTORSDATA SHEETJ111; J112; J113N-channel silicon field-effecttransistorsJuly 1993Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors J111; J112; J113DESCRIPTIONSymmetrical silicon n-channeljunction FETs in plastic TO-92envelopes. They are intended forapp
0.2. pmbfj111 pmbfj112 pmbfj113.pdf Size:47K _philips
PMBFJ111; PMBFJ112;PMBFJ113N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (
J111f Twrp
0.3. pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf Size:32K _philips
DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ111;PMBFJ112; PMBFJ113N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ111;N-channel junction FETsPMBFJ112; PMBFJ113FEATURES High-speed switching Interchangeability of drain andsource connections3handbook, halfpage Low
0.4. ssm3j111tu.pdf Size:255K _toshiba
SSM3J111TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J111TU High Speed Switching Applications Unit: mm 2.5V drive 2.10.1 Low on-resistance: Ron = 480m (max) (@VGS = -4 V) 1.70.1Ron = 680m (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) 132Characteristic Symbol Rating UnitDrain-Source voltage VDS -20 VGate-Source vol
0.5. mmbfj111 mmbfj112 mmbfj113.pdf Size:151K _fairchild_semi
August 2012J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113N-Channel SwitchFeatures This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Source & Drain are interchangeable.MMBFJ111J111 MMBFJ112J112 MMBFJ112_SB51338J113 MMBFJ113GSSOT-23G TO-92 Mark
0.6. j111 j112 j113 mmbfj111 mmbfj112 mmbfj113.pdf Size:488K _fairchild_semi
J111 MMBFJ111J112 MMBFJ112J113 MMBFJ113GSG TO-92S SOT-23 DDMark: 6P / 6R / 6SNOTE: Source & Drain are interchangeableN-Channel SwitchThis device is designed for low level analog switching, sampleand hold circuits and chopper stabilized amplifiers. Sourcedfrom Process 51.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVDG D
0.7. j111 j112 j113 sst111 sst112 sst113.pdf Size:52K _vishay
J/SST111 SeriesVishay SiliconixN-Channel JFETsJ111 SST111J112 SST112J113 SST113PRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)J/SST111 3 to 10 30 5 4J/SST112 1 to 5 50 5 4J/SST113 v3 100 5 4FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 111
0.8. j111 j112.pdf Size:85K _onsemi
J111, J112JFET Chopper TransistorsN-Channel DepletionFeatureshttp://onsemi.com Pb-Free Packages are Available*1 DRAINMAXIMUM RATINGSRating Symbol Value Unit3Drain-Gate Voltage VDG -35 VdcGATEGate -Source Voltage VGS -35 VdcGate Current IG 50 mAdc2 SOURCETotal Device Dissipation @ TA = 25C PD 350 mWDerate above = 25C 2.8 mW/CLead Temperature TL 300
Datasheet: IXTZ35N25MB, IXTZ42N20MA, IXTZ42N20MB, IXTZ67N10MA, IXTZ67N10MB, J108, J109, J110, IRF3710, J112, J113, J211, J212, JANSR2N7272, JANSR2N7275, JANSR2N7278, JANSR2N7292.
Transistor Fet J111
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J111 Transistor
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J111 Transistor Datasheet
