EPC introduces 170V, 6.8milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more efficient, more reliable, and lower cost than currently available devices for high performance 48V synchronous rectification.
EGaN transistors and ICs are more thermally efficient for unmatched power density Smaller, more efficient, and lower cost. Increased efficiency AND power. EGaN FET design delivers 60% more output power in less than half the board area. News: Microelectronics 2 March 2021. EPC adds automotive-qualified 65V eGaN FET for higher-res LiDAR. Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications – has expanded its AEC Q101-qualified product family with the. EGaN® FET DATASHEET EPC – EFFICIENT POWER CONVERSION CORPORATION WWW. EPC-CO.COM COPYRIGHT 2013 PAGE 1 EPC2015 EPC2015 – Enhancement Mode Power. SETUP AND OPERATION Development board EPC9126 is easy to set up to evaluate the performance of the EPC2016C eGaN FET as a laser driver.
Efficient Power Conversion (EPC) advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2059 (6.8 mΩ, 170 V) eGaN FET. This device is the latest in a family of 100 V – 200 V solutions suitable for a wide-range of power levels and price points. They are designed to meet the increasing demands of 48 V – 56 V server and data center products as well as an array of consumer power supply applications for high end computing, including gaming PCs, LCD/LED TVs, and LED lighting.
The EPC2059 is ideal for DC-DC secondary-side synchronous rectification in AC/DC adaptors, fast chargers, and power supplies with power ranges between 100 W and 6 kW. The performance advantage of gallium nitride devices helps designers achieve the demanding efficiency requirements for 80 Plus Titanium power supplies, while providing smaller, faster, cooler, and lighter systems with lower system costs then currently available solutions.
Development Board
The EPC9098 development board is a 170 V maximum device voltage, 25 A maximum output current, half bridge with onboard gate drives, featuring the EPC2059 eGaN FETs. This 2' × 2' (50.8 mm × 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2059.
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| The EPC9098 development board. |
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Price and Availability
The EPC2059 is priced at $1.59 each in 2.5Ku volumes.
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The EPC9098 development board is price at $123.75 each.
